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• [1] Ga- and N-Polar Gan Growth on Sic, Si(111), and Bulk Gan by Mocvd Using Indium Surfactants. - Investigation of Stress Relaxation Mechanism Modified by Indium Surfactants, Using Multi-Beam Optical Stress Sensor (Moss) That Enables In-Situ Stress Measurement. - Development of Nucleation &Amp; Growth Model for V-Defect Formation in Gan Epilayers with Indium Surfactant and Si-Doping. [2] Hybrid Semiconductor (Crystalline and Hydrogenated Amorphous Si) -Embedded Optical Fibers - High… Show More [1] Ga- and N-Polar Gan Growth on Sic, Si(111), and Bulk Gan by Mocvd Using Indium Surfactants. - Investigation of Stress Relaxation Mechanism Modified by Indium Surfactants, Using Multi-Beam Optical Stress Sensor (Moss) That Enables In-Situ Stress Measurement. - Development of Nucleation &Amp; Growth Model for V-Defect Formation in Gan Epilayers with Indium Surfactant and Si-Doping. [2] Hybrid Semiconductor (Crystalline and Hydrogenated Amorphous Si) -Embedded Optical Fibers - High Pressure Cvd Process Inside Microstructured Optical Fibers (Mofs). - Modulation of Guided IR Light by Visible Nanosecond Pulsed Laser Inside Hybrid Fibers Using Free Carrier Plasma Dispersion Effect. Show Less
• Mocvd-Grown High-K Tio2 and La2o3 Thin Films.